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| Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SD813 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 25 20 7 0.5 1 300 150 -55 to +150 Unit V V V A A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5Y Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 20V, IB = 0 VCE = 2V, IC = 500mA* VCE = 2V, IC = 1A* IC = 500mA, IB = 20mA* IC = 500mA, IB = 50mA* VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 150 6 65 50 0.2 0.4 1.2 V V MHz pF * Pulse measurement min 25 20 7 0.1 1 350 typ max Unit V V V A A Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN4503 IC -- VCE 1.2 18mA 16mA 14mA 12mA 10mA 8mA 6mA 0.6 4mA 0.4 2mA 0.2 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 IB=20mA Total power dissipation PT (mW) Collector current IC (A) 400 1.0 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.8 300 200 Ta=75C 25C -25C 100 0 0 40 80 120 160 0 0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 IC/IB=10 600 hFE -- IC 240 VCE=2V VCB=10V f=100MHz Ta=25C fT -- I E Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 500 200 400 Ta=75C 300 25C -25C 200 160 120 80 100 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 0 -1 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 24 Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25C 16 12 8 4 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 |
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